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Features:
5G NR High-Power TDD Amplifier – Purpose-built for 4.5–5.0GHz ad-hoc and private 5G networks, delivering 50±1dBm (100W) downlink output with 200MHz selectable sub-bandwidth within the full 500MHz spectrum.
GaN Efficiency for High-Density Deployments – Leverages 48V gallium nitride technology with ≤12A current draw, achieving superior power density and significantly reducing heat sink requirements for compact 100W 5G nodes.
Agile Sub-Band Channel Selection – Supports flexible 200MHz channelization within the 500MHz operating band, enabling rapid adaptation to dynamic spectrum allocation and regional 5G frequency licensing constraints.
Ad-Hoc Optimized Uplink Architecture – Features integrated upstream filtering with a noise figure of ≤34dB (intentionally relaxed for self-organizing networks), prioritizing out-of-band interference rejection over receiver sensitivity for robust peer-to-peer connectivity.
Upstream filtering for interference rejection – Integrated uplink filtering reduces out-of-band noise and improves receiver selectivity in congested RF environments.
RS485 Full-Duplex Telemetry – 19200 baud interface enables remote gain/ATT adjustment, module on/off control, and real-time queries of forward power (accuracy ±1dB over >20dB range) and internal temperature (accuracy ±3℃ from -25℃ to +85℃).
Extended Thermal Protection Margin – Hardware-based over-temperature shutdown at 95°C with auto-recovery at 65°C provides an additional 10°C headroom compared to standard designs, accommodating high-power 5G operation in thermally constrained enclosures.
Active Fault Reporting with Dual Thresholds – Automatic reporting of over-power (exceeds rated max by +2dB) and over-temperature conditions; both alarms trigger active notifications via RS485 for remote diagnostics.
Comprehensive Downlink Conditioning – Integrated ATT provides ≥25dB gain adjustment range with ≤±1.5dB flatness across all attenuation steps; ALC extends ≥10dB dynamic range to stabilize output against input signal variations.
CMOS 3.3V TDD Frame Synchronization – Independent logic inputs for TX/PA and RX/LNA switching (high=enable, low=disable) provide precise alignment with TDD slot timing, eliminating external RF switching components.
Compact 200×160×23mm Form Factor – Space-efficient mechanical design with silk screen markings per dimension drawing, suitable for integration into 5G remote radio units, small-cell nodes, and portable ad-hoc transceivers.
Technical Specification:
Product Name:
1. UZI-TDD-4.5~5.0G-100W-200160-48VGaN-485
Note:
1. 5G Mode Software
2. Signal Source Bandwidth: 10 MHz, Peak-to-Average Power Ratio (PAPR): 8 dB
3. Integrated with RS-485 Monitoring Function
4. 48V Power Supply, Gallium Nitride (GaN) Technology
5. Designed for Ad Hoc Network, Equipped with Upstream Filtering
6. 500 MHz Bandwidth with 200 MHz Selectable Channel
Items: | Uplink (UL) & Downlink (UL) Specifications: |
Operating Frequency Band： | 1. UL:4500 MHz - 5000 MHz200 MHz sub-bandwidth selectable within 500 MHz 2. DL:4500 MHz - 5000 MHz200 MHz sub-bandwidth selectable within 500 MHz |
Max Gain: | 1. UL:14±2dB 2. DL:50-53dB |
Maximum Output Power: | 1. UL:Uncontrolled 2. DL:50±1dBm |
Maximum Input Level: | 1. UL:NONE 2. DL:+2dBm |
Gain Adjustment Range: | 1. UL:NONE 2. DL:≥25dB |
ALC Range: | 1. UL:NONE 2. DL:≥10dB |
Gain Flatness: | 1. UL:NONE 2. DL a. ATT10dB： ≤±1dB b. ATT20dB： ≤±1dB c. ATT25dB： ≤±1.5dB |
In-Band Ripple: | ≤3 dB |
Noise Figure: | 1. UL:≤34dB 2. DL:NONE |
Tx-Rx Isolation: | ≥55dBc |
EVM: | ≤5% (Peak-to-Average Power Ratio 80dB) |
VSWR: | ≤1.4 (Test condition: power on for testing after turning off the downlink power amplifier.) |
Operating Voltage: | 48V |
Operating Current: | ≤12A |
Baud Rate: | 19200 |
Working Temperature: | -40~+55℃ |
Over-Temperature Protection: | Alarm and shutdown at +95℃, resume operation at 65℃ |
Transmit-Receive Wire Control Interface: | CMOS 3.3V |
Monitoring Functions: | 1. For the wiring diagram of the monitoring port, refer to the outline dimension drawing; RS485 interface communication a. Settings: switch, gain; b. Query: module status (including power amplifier status, over-power alarm, over-temperature alarm), power amplifier temperature, power amplifier ATT value, detected forward power; c. Over-power alarm: alarm when the power exceeds the maximum output power by +2dB; d. Over-temperature alarm: recommended threshold is +85℃; alarm is triggered when the detected temperature exceeds +85℃, and the power amplifier is turned off simultaneously, then turned on at +65℃; e. Power amplifier temperature detection: the detection range shall include but not be limited to -25℃~+85℃, with a detection accuracy of ±3℃; f. Forward power detection: the detection range shall be greater than 20dB, with a detection accuracy of less than ±1dB; |
Silk Screen : | Inspect according to the dimension drawing |
Mechanical Dimensions: | 200*160*23 |
Dimensional Drawing:
1.RX:LNA (uplink) switch, CMOS 3.3V high level turns it on, low level turns it off.
2.TX:PA (downlink) switch, CMOS 3.3V high level turns it on, low level turns it off.
Sample:
